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Outstanding quality silicon and germanium can act as piezoresistive materials

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Quantifying the Piezoresistive Mechanism in High ...

Quantifying the Piezoresistive Mechanism in High ...

Jan 31, 2022 · Printed strain sensors will be important in applications such as wearable devices, which monitor breathing and heart function. Such sensors need tobine high sensitivity and low resistance with other factors such as cyclability, low hysteresis, and minimal frequency/strain-rate dependence. Although posite sensors can display a high gauge factor (G), they …
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Silicon and Germanium - Georgia State University

Silicon and Germanium - Georgia State University

In solid state electronics, either pure silicon or germanium may be used as the intrinsic semiconductor which forms the starting point for fabrication. Each has four valence electrons, but germanium will at a given temperature have more free electrons and a higher conductivity. Silicon is by far the more widely used semiconductor for electronics, partly because it can be used at …
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Multiple Choice Questions and Answers ... - Electronics Post

Multiple Choice Questions and Answers ... - Electronics Post

Jan 09, 2020 · Multiple Choice Questions and Answers on Semiconductor Theory . Objective Questions and Answers on Semiconductor Theory .
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Germanium-on-Silicon for Integrated Silicon Photonics

Germanium-on-Silicon for Integrated Silicon Photonics

been demonstrated that with a suf ciently thick graded layer high quality and low dislocated germanium lms can be successfully grown on silicon (Currie et al., 1998). A thick graded GeSi layerplicates epitaxial growth and device fabrication, so an alternative approach which uses a low temperature germanium layer (called buffer layer
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Piezoresistance of silicon and strained Si0.9Ge0.1 ...

Piezoresistance of silicon and strained Si0.9Ge0.1 ...

Sep 23, 2005 · For materials with the same lattice symmetry as silicon, that is they belong to crystal class O h, π consists of only three independent piezoresistive coefficients, π 11, π 12, and π 44. When a strained layer of Si 1− x Ge x is grown on top of a silicon substrate the lattice constant in the surface plane bes equal to that of silicon.
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Localised Tuneable Composition Single Crystal Silicon ...

Localised Tuneable Composition Single Crystal Silicon ...

The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at themunication wavelengths of 1.3 μ m and 1.55 μ m. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors and could also form the …
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C.S. Smith, “Piezoresistance Effect in Germanium and ...

C.S. Smith, “Piezoresistance Effect in Germanium and ...

STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon Junji Yamanaka, Chiaya Yamamoto, Hiroki Nakaie, Tetsuji Arai, Keisuke Arimoto, Kosuke O. Hara, Kiyokazu Nakagawa Journal of Materials Science and Chemical Engineering Vol.5 No.1 , January 16, 2017
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Why silicon and germanium are semiconductors

Why silicon and germanium are semiconductors

Feb 09, 2016 · Germanium atoms have one more shell than silicon atoms, but what makes for the interesting semiconductor properties is the fact that both have four electrons in the valence shell. As a consequence, both materials readily constitute themselves as crystal lattices. Substituted atoms alter the electrical properties.
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Piezoresistance - an overview | ScienceDirect Topics

Piezoresistance - an overview | ScienceDirect Topics

The effect of piezoresistance in germanium and silicon was discovered by C.S. Smith in 1954 [1].It was found that the resistance of a germanium or silicon filament changed when the material was stressed. The effect of piezoresistance is similar to the strain gauge effect in a metal material, but the differences between them are quite fundamental:
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Piezoresistive Pressure Sensors | The Design Engineer's ...

Piezoresistive Pressure Sensors | The Design Engineer's ...

Semiconducting materials, mostmonly silicon, can also be used to make strain gauge pressure sensors. The characteristics of the sensing element, particularly the size of the piezoresistive effect, can be adjusted by doping; in other words by adding carefully controlled amounts of impurities (dopants) to the semiconductor.
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Piezoresistance - an overview | ScienceDirect Topics

Piezoresistance - an overview | ScienceDirect Topics

The effect of piezoresistance in germanium and silicon was discovered by C.S. Smith in 1954 [1]. It was found that the resistance of a germanium or silicon filament changed when the material was stressed. The effect of piezoresistance is similar to the strain gauge effect in a metal material, but the differences between them are quite fundamental:
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Wide bandgap semiconductor thin films for piezoelectric ...

Wide bandgap semiconductor thin films for piezoelectric ...

Dec 14, 2013 · For many years, silicon has been the material most employed as piezoresistive element in pressure sensors and accelerometers. The temperature dependence of the piezoresistive effect in silicon is well documented in the literature. It is known how the piezoresistive coefficients change with the temperature.
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Eco-friendly Strategies for the Material and Fabrication ...

Eco-friendly Strategies for the Material and Fabrication ...

Nov 23, 2020 · Literatures have shown that mono-Si nanomembranes (NMs), polycrystalline silicon, amorphous silicon and germanium can be dissolved in physiological aqueous solutions, and the dissolution rates can be effected by the doping status and solution parameters (e.g. pH, temperatures, concentrations and types of ions and proteins) [79, 145,146,147 ...
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